document number: 81770 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 1 silicon phototransistor in 0805 package TEMT7100X01 vishay semiconductors description TEMT7100X01 is a silicon npn epitaxial planar phototransistor with daylight blocking filter in a miniature, black 0805 package for surface mounting. filter bandwidth is matched with 830 nm to 950 nm ir emitters. features ? package type: surface mount ? package form: 0805 ? dimensions (l x w x h in mm): 2 x 1.25 x 0.85 ? aec-q101 qualified ? high photo sensitivity ? daylight blocking filter matches with 830 nm to 950 nm ir emitters ? angle of half sensitivity: ? = 60 ? package matched with ir emitter series vsmb1940x01 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? detector in automotive applications ? photo interrupters ? miniature switches ? counters ?encoders ? position sensors note ? test condition see table basic characteristics note ? moq: minimum order quantity 20043-1 product summary component i cae ( a) ? (deg) ? 0.5 (nm) TEMT7100X01 225 to 675 60 750 to 1010 ordering information ordering code packaging remarks package form TEMT7100X01 tape and reel mo q: 3000 pcs, 3000 pcs/reel 0805 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit collector emitter voltage v ceo 20 v emitter collec tor voltage v eco 7v collector current i c 20 ma power power dissipation t amb ? 55 c p v 100 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. reflow profile fig. 8 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 270 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81770 2 rev. 1.1, 21-feb-11 TEMT7100X01 vishay semiconductors silicon phototransistor in 0805 package fig. 1 - power dissipation limit vs. ambient temperature basic characteristics (t amb = 25 c, unless otherwise specified) fig. 2 - collector dark current vs. ambient temperature fig. 3 - collector light current vs. irradiance 0 20 40 60 80 100 120 0 10 203040 50607080 90100 21331 r thja = 270 k/w t amb - ambient temperature (c) p v - power dissipation (mw) basic characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit collector emitter breakdown voltage i c = 0.1 ma v ceo 20 v collector dark current v ce = 5 v, e = 0 i ceo 1 100 na collector emitte r capacitance v ce = 0 v, f = 1 mhz, e = 0 c ceo 25 pf collector light current e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v i ca 225 450 675 a angle of half sensitivity ? 60 deg wavelength of peak sensitivity ? p 870 nm range of spectral bandwidth ? 0.5 750 to 1010 nm collector emitter sa turation voltage i c = 0.05 ma v cesat 0.4 v temperature coefficient of i ca e e = 1 mw/cm 2 , ? = 950 nm, v ce = 5 v tk ica 1.1 %/k 1 10 100 1000 10 000 0 102030405060708090100 t amb - ambient temperature (c) i ce0 - collector dark current (na) i f = 0 v ce = 70 v v ce = 25 v v ce = 5 v 20594 0.001 0.01 0.1 1 10 0.01 0.1 1 10 i ca - collector light current (ma) e e - irradiance (mw/cm2) 21551 v ce = 5 v
document number: 81770 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 3 TEMT7100X01 silicon phototransistor in 0805 package vishay semiconductors fig. 4 - rise/fall time vs. collector current fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant sensitivity vs. angular displacement fig. 7 - relative collector current vs. ambient temperature reflow solder profile fig. 8 - lead (pb)-free reflow solder profile acc. j-std-020 drypack devices are packed in mois ture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. each bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 168 h conditions: t amb < 30 c, rh < 60 % moisture sensitivity level 3, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. 0 10 20 30 40 50 60 70 80 90 100 0 250 500 750 1000 1250 1500 1750 2000 i c - collector current (a) t r /t f - rise/fall time (s) t f t r 20599 r l = 100 0 0.2 0.4 0.6 0.8 1.0 1.2 600 700 800 900 1000 1100 21552 - wavelength (nm) s( ) rel - relative spectral sensitivity 0.4 0.2 0 i e, rel - relative radiant intensity 94 8013 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 ? - angular displacement 0 0.6 0.8 1.0 1.2 1.4 2.0 20 40 60 80 100 1.6 1.8 94 8239 t amb - ambient temperature (c) i ca rel - relative collector current v ce = 5 v e e = 1 mw/cm 2 = 950 nm 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperature (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp up 3 c/s max. ramp down 6 c/s 19841 255 c
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81770 4 rev. 1.1, 21-feb-11 TEMT7100X01 vishay semiconductors silicon phototransistor in 0805 package package dimensions in millimeters 19757
document number: 81770 for tec hnical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 21-feb-11 5 TEMT7100X01 silicon phototransistor in 0805 package vishay semiconductors blister tape dimensions in millimeters 20690 quantity per reel: 3000 pcs
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81770 6 rev. 1.1, 21-feb-11 TEMT7100X01 vishay semiconductors silicon phototransistor in 0805 package reel dimensions in millimeters of the wheel i s s upplier s pecic. form of the leave open i ss ue: 2; 26.04.10 drawing-no.: 9.800-5096.01-4 s pecication s according to din technical drawing s ? 177.8 max. ? 55 min. 8.4 +2.5 8.4 +0.15 14.4 max. ? 13 + 0.5 - 0.2 1.5 min. ? 20.2 min. z z 2:1 20875
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